Growth and Interface Structure of Mn on InP (001)

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 730-731 DOI:

Original Articles

Growth and Interface Structure of Mn on InP (001)

DONG Guo-sheng¹;CHEN Yan¹;SHEN Xiao-liang²;JIN Xiao-feng¹

¹Laboratory of Surface Physics, ²Analysis and Measurement Center, Fudan University, Shanghai 200433

Cite this article:

DONG Guo-sheng, CHEN Yan, SHEN Xiao-liang et al 1998 Chin. Phys. Lett. 15 730-731

Download: PDF(170KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract An attempt to grow single crystalline thin films of body-centered-cubic (bcc) Mn on InP (001) has been carried out by molecular beam epitaxy. In situ reflection high energy electron diffraction and ex situ x-ray diffraction are used to characterize the film and interface structures. It is found that the metastable phase of bcc Mn fails to stabilize on the substrate despite of their perfect lattice-match. This result suggests again the importance of interface structure in the epitaxy of 3d metals on semiconductors.

Keywords: 68.35.Ct 61.14.Hg 61.10.Kw

Published: 01 October 1998

PACS:	68.35.Ct	(Interface structure and roughness)
	61.14.Hg
	61.10.Kw

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0730

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	DONG Guo-sheng
	CHEN Yan
	SHEN Xiao-liang
	JIN Xiao-feng

Related articles from Frontiers Journals

[1]	XUE Bai-Qing,CHANG Hu-Dong,SUN Bing,WANG Sheng-Kai,LIU Hong-Gang. The Impact of HCl Precleaning and Sulfur Passivation on the Al₂O₃/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors**[J]. Chin. Phys. Lett., 2012, 29(4): 730-731
[2]	LU Li,CHANG Hu-Dong,SUN Bing,WANG Hong,XUE Bai-Qing,ZHAO Wei,LIU Hong-Gang. Solid Phase Reactions of Ni-GaAs Alloys for High Mobility III–V MOSFET Applications**[J]. Chin. Phys. Lett., 2012, 29(4): 730-731
[3]	YU Yang, WU Qun, WANG Xue-Wei, YANG Xiao-Bin. Wetting Behavior between Droplets and Dust[J]. Chin. Phys. Lett., 2012, 29(2): 730-731
[4]	TAN Ting-Ting, LIU Zheng-Tang, LI Yan-Yan . Electrical, Structural and Interfacial Characterization of HfO₂ Films on Si Substrates**[J]. Chin. Phys. Lett., 2011, 28(8): 730-731
[5]	XU Run, TANG Min-Yan, ZHU Yan-Yan, WANG Lin-Jun . Epitaxial Growth of Si(111)/Er₂O₃ (111) Structure on Si(111) by Molecular Beam Epitaxy**[J]. Chin. Phys. Lett., 2011, 28(3): 730-731
[6]	MEI Mao-Fei, YU Bo-Ming, LUO Liang, CAI Jian-Chao. A Model for the Contact Angle of Liquid Droplets on Rough Surfaces[J]. Chin. Phys. Lett., 2010, 27(7): 730-731
[7]	ZHANG Ning-Yu, TENG Shu-Yun, SONG Hong-Sheng, LIU Gui-Yuan, CHENG Chuan-Fu. Extraction of Parameters of Random Self-Affine Fractal Surfaces from Light Scattered Intensity by Levenberg-Marquardt Algorithm[J]. Chin. Phys. Lett., 2009, 26(3): 730-731
[8]	CUI Jun-Peng, WANG Xiao-Feng, DUAN Yao, HE Jin-Xiao, ZENG Yi-Ping,. Stress Analysis of ZnO Film with a GaN Buffer Layer on Sapphire Substrate[J]. Chin. Phys. Lett., 2008, 25(6): 730-731
[9]	LIN Guo-Qiang, ZENG Yi-Ping, WANG Xiao-Liang, LIU Hong-Xin. Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia[J]. Chin. Phys. Lett., 2008, 25(11): 730-731
[10]	YUAN Hong-Tao, LIU Yu-Zi, WANG Xi-Na, LI Han-Dong, WANG Yong, ZENG Zhao-Quan, MEI Zeng-Xia, DU Xiao-Long, JIA Jin-Feng, XUE Qi-Kun, ZHANG Ze. Controlled Growth of Zn-Polar ZnO Films on Al-Terminated α-Al₂O₃(0001) Surface by Using Wurtzite MgO Buffer[J]. Chin. Phys. Lett., 2007, 24(8): 730-731
[11]	LIU Yan-Fang, LIU Jin-Feng, XU Peng-Shou, PAN Hai-Bin. X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C₆₀ and Si[J]. Chin. Phys. Lett., 2007, 24(7): 730-731
[12]	ZHOU Zhong-Tang, GUO Li-Wei, XING Zhi-Gang, DING Guo-Jian, ZHANG Jie, PENG Ming-Zeng, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming. Growth of Semi-Insulating GaN by Using Two-Step AlN Buffer Layer[J]. Chin. Phys. Lett., 2007, 24(6): 730-731
[13]	XUE Xian-Ying, WANG Yu-Zhu, JIA Quan-Jie, WANG Yong, CHEN Yu, JIANG Xiao-Ming, ZHU Yan-Yan, JIANG Zui-Min. Microstructure of Epitaxial Er₂O₃ Thin Film on Oxidized Si (111) Substrate[J]. Chin. Phys. Lett., 2007, 24(6): 730-731
[14]	WU Xiang-Yao, ZHANG Bai-Jun, LI Hai-Bo, LU Jing-Bin, LIU Xiao-Jing, WANG Li, ZHANG Chun-Li, LIU Bing, FAN Xi-Hui, GUO Yi-Qing. Quantum Theory of Electronic Double-Slit Diffraction[J]. Chin. Phys. Lett., 2007, 24(10): 730-731
[15]	ZHONG Fei, QIU Kai, LI Xin-Hua, YIN Zhi-Jun, XIE Xin-Jian, WANG Yang, JI Chang-Jian, CAO Xian-Cun, HAN Qi-Feng, CHEN Jia-Rong, WANG Yu-Qi. Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2007, 24(1): 730-731

Viewed

Full text

Abstract