Fine Structure in the Electron Emission Process for Two DX-Like Centers in Sn-Doped AlGaAs

Chin. Phys. Lett.

1998, Vol. 15

Issue (1): 60-61 DOI:

Original Articles

Fine Structure in the Electron Emission Process for Two DX-Like Centers in Sn-Doped AlGaAs

ZHAN Hua-han;KANG Jun-yong;HUANG Qi-sheng

Department of Physics, Xiamen University, Xiamen 361005

Cite this article:

ZHAN Hua-han, KANG Jun-yong, HUANG Qi-sheng 1998 Chin. Phys. Lett. 15 60-61

Download: PDF(193KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Fine structure in the electron emission process for DX(Sn) centers in AJGaAs has been studied with high resolution Laplace defect spectroscopy. The influence of the different local configuration of AI and Ga atoms around the centers on the electron thermal emissions was observed. An experimental evidence for the microscopic structure of two DX-like centers in Sn-doped AJGaAs is provided.

Keywords: 71.55.-i 61.55. Hg 06.50.-x

Published: 01 January 1998

PACS:	71.55.-i	(Impurity and defect levels)
	61.55. Hg
	06.50.-x

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I1/060

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	ZHAN Hua-han
	KANG Jun-yong
	HUANG Qi-sheng

Related articles from Frontiers Journals

[1]	CUI Jin-Ming, CHEN Xiang-Dong, FAN Le-Le, GONG Zhao-Jun, ZOU Chong-Wen, SUN Fang-Wen, HAN Zheng-Fu, GUO Guang-Can. Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation[J]. Chin. Phys. Lett., 2012, 29(3): 60-61
[2]	GAO Li-Peng, HAN Pei-De, MAO Xue, FAN Yu-Jie, HU Shao-Xu, ZHAO Chun-Hua, MI Yan-Hong . Deep Energy Levels Formed by Se Implantation in Si**[J]. Chin. Phys. Lett., 2011, 28(3): 60-61
[3]	HE Man-Chao, FANG Zhi-Jie, ZHANG Ping. Theoretical Studies on Defects of Kaolinite in Clays[J]. Chin. Phys. Lett., 2009, 26(5): 60-61
[4]	YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao,. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra[J]. Chin. Phys. Lett., 2009, 26(4): 60-61
[5]	LIU Bing-Ce, LIU Ci-Hui, FU Zhu-Xi, Yi Bo. Effects of Grain Boundary Barrier in ZnO/Si Heterostructure[J]. Chin. Phys. Lett., 2009, 26(11): 60-61
[6]	FANG Zhi-Jie, FANG Cheng, SHI Li-Jie, LIU Yong-Hui, HE Man-Chao. First-Principles Study of Defects in CuGaO₂[J]. Chin. Phys. Lett., 2008, 25(8): 60-61
[7]	JIANG Xiao-Shu, Walter R. L. Lambrecht. Jahn--Teller Distortion of the Zinc Vacancy in ZnGeP₂[J]. Chin. Phys. Lett., 2008, 25(3): 60-61
[8]	PANG Chao, SHI Jun-Jie, ZHANG Yan, K. S. A. Butcher, T. L. Tansley, J. E.Downes, SHANG Jia-Xiang. Electronic Structures of Wurtzite GaN with Ga and N Vacancies[J]. Chin. Phys. Lett., 2007, 24(7): 60-61
[9]	DING Zong-Ling, XING Huai-Zhong, XU Sheng-Lan, HUANG Yan, CHENXiao-Shuang. First-Principles Study of Electronic Properties in PbS(100) with Vacancy Defect[J]. Chin. Phys. Lett., 2007, 24(11): 60-61
[10]	F. Ayad, M. Remram. Modelling of Gettering by Mechanical Damage of Metallic Impurities in Silicon[J]. Chin. Phys. Lett., 2006, 23(11): 60-61
[11]	XU Tian, CAO Zhuang-Qi, OU Yong-Cheng, ZHU Guo-Long. Accurate Bound-State Spectra for Hydrogenic Donors in GaAs--(Ga, Al)As Quantum Dots[J]. Chin. Phys. Lett., 2005, 22(11): 60-61
[12]	LI Guo-Qiang, JIE Wan-Qi, GU Zhi, YANG Ge, WANG Tao. CdZnTe Energy Levels Induced by Doping of Indium[J]. Chin. Phys. Lett., 2004, 21(2): 60-61
[13]	E. Kasapoglu, H. Sari, I.Sö, kmen. Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well[J]. Chin. Phys. Lett., 2004, 21(12): 60-61
[14]	LIU Shu-Man, GUO Hai-Qing, ZHANG Zhi-Hua, LIU Feng-Qi, WANG Zhan-Guo. Photoluminescence of Eu²⁺ Doped ZnS Nanocrystals[J]. Chin. Phys. Lett., 2000, 17(8): 60-61
[15]	SHI Yi, WU Fengmei, ZHENG Youdou, SUEZAWA Masashi, SUMINO Koji. Influence of the Position of the Fermi Level on an Infrared Active Defect in Irradiated Silicon [J]. Chin. Phys. Lett., 1995, 12(5): 60-61

Viewed

Full text

Abstract