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Observation of the Third Subband Population in Modulation-Doped InGaAs/InAlAs Heterostructure |
| LI Han-xuan;WANG Zhan-guo;LIANG Ji-ben;XU Bo;LU Mei;WU Ju;GONG Qian;JIANG Chao;LIU Feng-qi;ZHOU Wei |
| Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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LI Han-xuan, WANG Zhan-guo, LIANG Ji-ben et al 1998 Chin. Phys. Lett. 15 57-59 |
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Abstract The population of the third (n = 3) two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence (PL). Three well resolved PL peaks centred at 0.737, 0.908, and 0.980eV are observed, which are attributed to the transitions from the lowest three electron subbands to the n = 1 heavy-hole subband. The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation. Thanks to the presence of Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation-dependent luminescences are also analyzed.
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| Keywords:
71.35.+z
78.55.Cr
73.20.Dx
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Published: 01 January 1998
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