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Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment |
YIN Min1,2;LOU Li-ren2;FU Zhu-xi2 |
1Structure Research Laboratory, University of Science and Technology of China and Chinese Academy of Sciences, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026
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Cite this article: |
YIN Min, LOU Li-ren, FU Zhu-xi 1997 Chin. Phys. Lett. 14 690-693 |
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Abstract A new method for metalorganic chemical vapor deposition (MOCVD) of GaAs on Si substrates is developed. Instead of the usual high temperature surface cleaning treatment for Si substrate, the new method uses room temperature HF vapor polishing in the preparation chamber in the MOCVD system as the first step of the growth. Single crystal GaAs layers with mirror-like surfaces were obtained.
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Keywords:
68.55.Ce
81.15.Gh
78.66.Fd
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Published: 01 September 1997
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PACS: |
68.55.Ce
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.66.Fd
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(III-V semiconductors)
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