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Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films |
HAN Wei-qiang1,2;HAN Gao-rong1;FAN Shou-shan2;GU Bing-lin2 |
1Department of Materials, Zhejiang University, Hangzhou 310027
2Department of Physics, Tsinghua University, Beijing 100084
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Cite this article: |
HAN Wei-qiang, HAN Gao-rong, FAN Shou-shan et al 1997 Chin. Phys. Lett. 14 682-685 |
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Abstract Hydrogenated nanocrystalline silicon nitrogen (nc-SiNx:H) films were prepared by rf glow discharge of gas mixture of silane (SiH4) and nitrogen (N2) diluted heavily by hydrogen (H2). The effect of the gas volume ratios Xg of (SiU4 +N2)/H2 and XN) of N2/SiH4 on the crystallization and composition of films is described. The growth process and crystallization mechanism of nc-SiNx:H films are discussed in detail.
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Keywords:
61.16.-d
81.15.Gh
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Published: 01 September 1997
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PACS: |
61.16.-d
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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