Fractal Aggregation Behavior in Amorphous Silicon Nitride Films

Chin. Phys. Lett.

1997, Vol. 14

Issue (6): 446-448 DOI:

Original Articles

Fractal Aggregation Behavior in Amorphous Silicon Nitride Films

YE Chao;NING Zhao-yuan;GUO Yu-hua¹;WANG Xiang-ying¹;XIN Yu;WANG Yuan-chang¹;SHEN Ming-rong;WANG Hao

Laboratory of Films Materials, Department of Physics, Suzhou University, Suzhou 215006 ¹Department of Electron Microscope, Suzhou Medical College, Suzhou 215007

Cite this article:

YE Chao, NING Zhao-yuan, GUO Yu-hua et al 1997 Chin. Phys. Lett. 14 446-448

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Abstract A fractal aggregation behavior in amorphous silicon nitride (Si_x N_y) films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition is reported. The fractal structure and dimension of 1.45 obtained by experiment and computer simulation are all in excellent agreement with the result predicted by the cluster-cluster-aggregation model. The forming of fractal structure is related to the change of discharge mode between ring plasma and bulk plasma.

Keywords: 68.55.Jk 61.43.Hv 73.50.Mx

Published: 01 June 1997

PACS:	68.55.Jk
	61.43.Hv	(Fractals; macroscopic aggregates (including diffusion-limited Aggregates))
	73.50.Mx	(High-frequency effects; plasma effects)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I6/0446

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	YE Chao
	NING Zhao-yuan
	GUO Yu-hua
	WANG Xiang-ying
	XIN Yu
	WANG Yuan-chang
	SHEN Ming-rong
	WANG Hao

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