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InAlAs/InGaAs Quantum Well Infrared Photodetectors with 3-5μm Band Grown by Gas Source Molecular Beam Epitaxy |
| ZHANG Yong-gang;LI Ai-zhen;CHEN Jian-xin;REN Yao-cheng |
| State Key Laboratory of FUnctional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHANG Yong-gang, LI Ai-zhen, CHEN Jian-xin et al 1997 Chin. Phys. Lett. 14 443-445 |
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Abstract The relationship between well width and subband energy as well as response wavelength of the InAlAs/InGaAs multi-quantum well structures have been calculated for the design of the devices by using Kronig-Penney model. By using gas source molecular beam epitaxy grown InAlAs/InGaAs quantum well infrared photodetector (QWIP) materials have been used to fabricate QWIP devices with 3-5μm band. I-V characteristics and response spectra of the devices have been measured. Results show that the devices have peak response at 4.0μm with full width of half maximum of about 29.5meV.
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| Keywords:
68.55.Bd
73.20.Dx
78.30.Fs
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Published: 01 June 1997
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