Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films

Chin. Phys. Lett.

1997, Vol. 14

Issue (10): 772-774 DOI:

Original Articles

Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films

WANG Xiao-ping;WANG Li-jun;XU Yue-e¹;SHEN Shu-po¹

Department of Applied Science, Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052 ¹Institute of Physics Engineering, Zhengzhou University, Zhengzhou 450052

Cite this article:

WANG Xiao-ping, WANG Li-jun, XU Yue-e et al 1997 Chin. Phys. Lett. 14 772-774

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Abstract Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate. Dependence of switching behaviour on boron impurity has been investigated. The threshold voltage obviously decreases with increasing content of boron dopant.

Keywords: 68.55.Gi 85.60.Jb 81.15.Gh

Published: 01 October 1997

PACS:	68.55.Gi
	85.60.Jb	(Light-emitting devices)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I10/0772

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