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Valence Offsets of Three Series of Alloy Heterojunctions |
ZHENG Jin-cheng;WANG Ren-zhi;ZHENG Yong-mei;CAI Shu-hui |
Department of Physics, Xiamen University, Xiamen 361005 |
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Cite this article: |
ZHENG Jin-cheng, WANG Ren-zhi, ZHENG Yong-mei et al 1997 Chin. Phys. Lett. 14 775-777 |
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Abstract Electron structure of three series of alloy heterojunctions (GaAs)x(Ge2)1-x/Ge,(AlAs)x (Ge2)1-x/Ge and AlxG1-xAs/Ge are calculated by linear muffin-tin orbital method with atomic-sphere approximation using the average-bond-energy theory in conjunction with a cluster expansion method. The results indicate the variations of ΔEv(x) at heterojunctions (GeAs)x(Ge2)1-x/Ge and (AlAs)x (Ge2)1-x/Ge are nonlinear, which are very different from that of AlxGa1-xAs/Ge.
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Keywords:
71.25.Tn
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Published: 01 October 1997
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