| Original Articles |
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Multiple Non-exponential Decay of Photo-induced Excess Electrons in Heterostructures |
| HE Li-xiong |
| National Laboratory for Semiconductor Superlattices and Microstructures, Beijing 100083
and Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002
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| Cite this article: |
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HE Li-xiong 1997 Chin. Phys. Lett. 14 67-70 |
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Abstract The derivative -dN(t)/dlgt of photo-induced excess electrons N(t) in GaAs-Al0.3 Ga0.7As and In0.15Ga0.85As-Al0.2Ga0.8As heterostructures with respect to 1gt shows a spectrum with pronounced peak-structure. The apparent capture energies, the lifetime prefactors, the apparent lifetime distribution, and the derivative decay quantities of individual lifetimes were analyzed to distinguish capture mechanisms.
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| Keywords:
72.40.+w
73.40.Lq
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Published: 01 January 1997
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| PACS: |
72.40.+w
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(Photoconduction and photovoltaic effects)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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