Light Emitting Diode Based on Tb(AcAc)<suB>3</suB>Phen

Chin. Phys. Lett.

1997, Vol. 14

Issue (1): 71-73 DOI:

Original Articles

Light Emitting Diode Based on Tb(AcAc)₃Phen

CHEN Li-chun^1,2;WANG Xiang-jun²;ZHANG Ruo-hua³;DENG Zhen-bo⁴;YAO Jian-quan¹;Jennifer Carter⁵

¹Institute of Laser and Photonics, Tianjin University, Tianjin 300072 ²Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191 ³Departmetn of Chemistry, Nankai University, Tianjin 300071 ⁴Department of Physics, Fudan University, Shanghai 200433 ⁵Department of Foreign Studies, Tianjin Institute of Technology, Tianjin 300191

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CHEN Li-chun, WANG Xiang-jun, ZHANG Ruo-hua et al 1997 Chin. Phys. Lett. 14 71-73

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Abstract A diode with Tb(AcAc)₃Phen as the emitting layer and PPV, Alq₃ as the hole and electron transporting layers was demonstrated. The emission of the diode had the unique line spectrum of pure Tb³⁺. The injected electron and hole recombination region was discussed.

Keywords: 78.60.Fi 78.66.Qn 73.61.Ph

Published: 01 January 1997

PACS:	78.60.Fi	(Electroluminescence)
	78.66.Qn	(Polymers; organic compounds)
	73.61.Ph	(Polymers; organic compounds)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I1/071

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	CHEN Li-chun
	WANG Xiang-jun
	ZHANG Ruo-hua
	DENG Zhen-bo
	YAO Jian-quan
	Jennifer Carter

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