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Light Emitting Diode Based on Tb(AcAc)3Phen |
CHEN Li-chun1,2;WANG Xiang-jun2;ZHANG Ruo-hua3;DENG Zhen-bo4;YAO Jian-quan1;Jennifer Carter5 |
1Institute of Laser and Photonics, Tianjin University, Tianjin 300072
2Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191
3Departmetn of Chemistry, Nankai University, Tianjin 300071
4Department of Physics, Fudan University, Shanghai 200433
5Department of Foreign Studies, Tianjin Institute of Technology, Tianjin 300191
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Cite this article: |
CHEN Li-chun, WANG Xiang-jun, ZHANG Ruo-hua et al 1997 Chin. Phys. Lett. 14 71-73 |
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Abstract A diode with Tb(AcAc)3Phen as the emitting layer and PPV, Alq3 as the hole and electron transporting layers was demonstrated. The emission of the diode had the unique line spectrum of pure Tb3+. The injected electron and hole recombination region was discussed.
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Keywords:
78.60.Fi
78.66.Qn
73.61.Ph
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Published: 01 January 1997
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