Electroluminescence of Boron Doped Diamond Thin Films

Chin. Phys. Lett.

1996, Vol. 13

Issue (6): 455-457 DOI:

Original Articles

Electroluminescence of Boron Doped Diamond Thin Films

ZHANG Bing-lin;WANG Xiao-ping¹;HE Jin-tian;Liu Da-jun;WANG Jian-en;Howard R. Shanks²

¹Department of Physics, and Henan Fundamental and Applied Science Research Institute, Zhengzhou University, Zhengzhou 450052 Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052 ²Microelectronics Research Center, Iowa State University, Ames, IA 50010, USA

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ZHANG Bing-lin, WANG Xiao-ping, HE Jin-tian et al 1996 Chin. Phys. Lett. 13 455-457

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Abstract Blue electroluminescence of boron doped diamond thin film is reported. The boron doped diamond thin films were deposited by microwave plasma assisted chemical vapor deposition on silicon substrate. The electroluminescence device was driven by a frequency-modulated power supply. The optimum frequency is near 3 kHz. The dependence of electroluminescence intensity on boron impurity has been investigated. The intensity increases with increasing boron impurity. This is expected result according to “Band A ”electroluminescence mechanism of donor-accepter pairs recombination.

Keywords: 68.55.Gi 85.60. Jb

Published: 01 June 1996

PACS:	68.55.Gi
	85.60. Jb

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I6/0455

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	ZHANG Bing-lin
	WANG Xiao-ping
	HE Jin-tian
	Liu Da-jun
	WANG Jian-en
	Howard R. Shanks

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