| Original Articles |
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Effect of Heat Treatment on Electrical and Optical Properties of Cd2SnO4 Films |
| PENG Dongliang;JIANG Shengrui;WANG Wanlu |
| Department of Physics, Lanzhou University 730001 |
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| Cite this article: |
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PENG Dongliang, JIANG Shengrui, WANG Wanlu 1993 Chin. Phys. Lett. 10 189-192 |
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Abstract Cd2SnO4 (CTO) films prepared by radio-frequency reactive sputtering from a Cd-Sn alloy target in Ar-O2 mixtures have been found to be a n-type degenerate semiconductor in which oxygen ,vacancies provide the donor states and free carrier concentration is up to 4.46x 1026 /m3. The films were annealed at temperature up to 500°C in stable Ar flow. Large Burstein shift has been observed in the visible transmission spectra. Photoluminescence spectrum measurement indicates the intrinsic optical gap of crystalline CTO is about 2.156eV. Analysis of electrical and optical data on CTO films before and after heat treatment leads to a calculated optical band gap in the range of 2.37-2.64eV and an effective mass 0.22-0.48 of the free electron mass.
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| Keywords:
81.40.-z
73.90.+f
78.55.Hx
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Published: 01 March 1993
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| PACS: |
81.40.-z
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(Treatment of materials and its effects on microstructure, nanostructure, And properties)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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78.55.Hx
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(Other solid inorganic materials)
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