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Passivating Studies on a P2S5/NH4OH-treated GaAs Surface Using Photoluminescence |
| WENG Yumin;FAN Zhineng;ZONG Xiangfu |
| Institute of Materials Science, Fudan University, Shanghai 200433 |
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| Cite this article: |
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WENG Yumin, FAN Zhineng, ZONG Xiangfu 1992 Chin. Phys. Lett. 9 254-257 |
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Abstract We demonstrated that the photoluminescence intensity and its contrast obtained on liquid encapsulated Czochralski GaAs depend on the surface recombination and they are controlled by chemical surface treatments. We have successfully passivated the surface of GaAs wafer on the basis of P2S5/NH4OH treatment.
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| Keywords:
68.55.+p
78.55.-r
71.55.-h
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Published: 01 May 1992
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