Metal-Organic Chemical Vapor Deposition Growth of GaAs.AIAs Double Barrier Resonant Tunneling Diode

Chin. Phys. Lett.

1992, Vol. 9

Issue (5): 258-261 DOI:

Original Articles

Metal-Organic Chemical Vapor Deposition Growth of GaAs.AIAs Double Barrier Resonant Tunneling Diode

REN Hongwen;HUANG Baibiao;XU Xiangang;LIU Shiwen;JIANG Minhua;YU Shuqin

Institute of Crystal Materials, Shandong University, Jinan 250100

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REN Hongwen, HUANG Baibiao, XU Xiangang et al 1992 Chin. Phys. Lett. 9 258-261

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Abstract We have growth two structures of AIAs/GaAs/AIAs double barrier resonant tunneling diodes by metal-organic chemical vapor deposition. The resonances to the first excited states were obtained, the measured peak-to-valley current ratio is 1.3 at 77K, room temperature peak current is 8kA/cm², the resonance voltages are in agreement with the theoretical approach by transfer-matrix method.

Keywords: 68.55.Ce 85.30.Mn 73.20.Dx

Published: 01 May 1992

PACS:	68.55.Ce
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	73.20.Dx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I5/0258

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	REN Hongwen
	HUANG Baibiao
	XU Xiangang
	LIU Shiwen
	JIANG Minhua
	YU Shuqin

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