DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY

Chin. Phys. Lett.

1990, Vol. 7

Issue (3): 129-132 DOI:

Original Articles

DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY

ZHANG Wenqing;HUANG Qisheng;KANG Junyong

Department of Physics, Xiamen University, Xiamen 361005

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ZHANG Wenqing, HUANG Qisheng, KANG Junyong 1990 Chin. Phys. Lett. 7 129-132

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Abstract Deep donor levels in Te-doped GaAs_1-xP_x for a large range of compositions have been studied by deep level transient spectroscopy (DLTS). Three kinds of deep levels A, B, and C were observed. Only level A appears in all the samples; it is considered that level A is originated from DX centers. No any regularity of presentation for levels B and C was able to find. Their properties are probably more complicated.

Keywords: 71.55.-i 72.20.Jv 72.80.Ey

Published: 01 March 1990

PACS:	71.55.-i	(Impurity and defect levels)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	72.80.Ey	(III-V and II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I3/0129

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