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INVESTIGATION OF NITROGEN CONTENT INFLUENCE ON ELECTRON SPIN RESONANCE IN a-Si:H/a-SiNx:H MULATLATYERS |
LIU Xiangna;ZHAO Zhouyin*;WANG Yong |
Physics Department, Laboratory for Solid State Microstructures,
Nanjing University, Nanjing, 210008
*Institute of Electronic Devices, Nanjing, 210008
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Cite this article: |
LIU Xiangna, ZHAO Zhouyin, WANG Yong 1990 Chin. Phys. Lett. 7 79-82 |
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Abstract Influence of nitrogen content on electron spin resonance (ESR) in a-Si:H/a-SiNx:H multilayers is studied, associated with infrared absorption analysis. The spin density decreases rapidly in the region x>~ 0.7 and approaches a saturated value, which is much less than common assumption. The results are explained in terms of the structure relaxation due to the increase of N-H bonds with increasing x and the transfer doping across interfaces.
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Keywords:
72.80.Ng
61.70.Sk
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Published: 01 February 1990
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