ELECTRONIC STRUCTURE OF CHALCOGENIDE COMPOUNDS

Chin. Phys. Lett.

1990, Vol. 7

Issue (2): 75-78 DOI:

Original Articles

ELECTRONIC STRUCTURE OF CHALCOGENIDE COMPOUNDS

LU Yanwu;WANG Dingsheng^*;RONG Ailun

Amorphous Research Laboratory, Beijing University of Aeronautics and Astronautics (BUAA), Beijing 100083 ^*Institute of Physics, Academia Sinica, Beijing 100080

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LU Yanwu, WANG Dingsheng, RONG Ailun 1990 Chin. Phys. Lett. 7 75-78

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Abstract Empirical linear combination of atomic orbitals (LCAO) calculations are performed to investigate the electronic structure of Sb₂Se₃, Sb₂Te₃, In₂Se₃ and In₂Te₃. The bands of bonding p states are overlapped with the bands of lone pair states in these materials. The absorption edges of these materials correspond to indirect gap, and the calculation agrees with experimental values.

Keywords: 71.25.Tn 71.25.Mg

Published: 01 February 1990

PACS:	71.25.Tn
	71.25.Mg

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I2/075

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