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ELECTRICAL RESISTANCE AND ACTIVATION ENERGY OF AMORPHOUS Ni-Si-B ALLOY FILM |
| CHENG Xianan*;SONG Ruan**; CHEN Bingyu;WANG Xuwei*;CHEN Jinchang*** |
| *Beijing Institute of Aeronautics and Astronautics, Beijing
**Beijing Institute of Computer Technology, Beijing
***Beijing Teachers College, Beijing
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| Cite this article: |
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CHENG Xianan, SONG Ruan, CHEN Bingyu et al 1986 Chin. Phys. Lett. 3 393-396 |
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Abstract The sheet resistance Rs and temperature coefficient of resistance (TCR) α (25-100°C) of amorphous Ni68Si15B17 films have been measured. The structure of films with Rs between 80-550Ω/sq. are more stable and have a lower TCR ( 10-6K-1-10-5K-1). In this range of Rs, TCR may change its sign, and the activation energy is much larger.
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Published: 01 September 1986
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