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ELLIPSOMETRIC SPECTRA AND DAMAGE PROFILES OF ION IMPLANTED SILICON
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| MO Dang;HE Xingfei |
| Department of Physics, Zhongshan University, Guangzhou |
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| Cite this article: |
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MO Dang, HE Xingfei 1986 Chin. Phys. Lett. 3 229-232 |
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Abstract By means of optimization with a multilayer model, the damage profile can be obtained from the measured data by spectroscopic ellipsometry without stripping. The damage profiles of 40keV As+ implanted Si at doses of 4 x 1013 and 1. 4 x 1014 ions cm-2 are shown and compared with those determined by Rutherford backscattering.
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Published: 01 May 1986
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