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THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING |
| ZHANG Shuyuan;WU Ziqin |
| Structure Analysis Laboratory, University of Science and Technology of China, Hefei, Anhui |
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| Cite this article: |
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ZHANG Shuyuan, WU Ziqin 1986 Chin. Phys. Lett. 3 549-552 |
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Abstract The interface contact of Mo/GaAs has been investigated by THREM and electron diffraction. It was found that a Mo3Ga structure was produced at the interfacial region after 500°C annealing due to the solid reaction.
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Published: 01 December 1986
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