中国物理快报
Chinese Physics Letters
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CPS Journals
物理
物理学报
Chinese Physics B
Chin. Phys. Lett.
1986
,
Vol. 3
Issue (1)
: 1-4
DOI
:
Original Articles
|
AN IMPROVED DEFECT MODEL FOR SCHOTTKY BARRIER FORMATION ON III-V COMPOUNDS
PAN shihong
1
MO Dang
2
W.E.Spicer
3
1
Department of Physics, Nankai University, Tianjin
2
Department of Physics, Zhongshan University, Guangzhou
3
Solid State Electronics Laboratory, Stanford University, U.S.A
Cite this article:
PAN shihong MO Dang W.E.Spicer 1986 Chin. Phys. Lett. 3 1-4
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Abstract
An improved defect model has been proposed by combination of the defect model with the Bardeen model. The predictions based on this model can qualitatively explain the experimental results of the Schottky barrier formation on GaAs(110).
Published:
01 January 1986
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https://cpl.iphy.ac.cn/
OR
https://cpl.iphy.ac.cn/Y1986/V3/I1/01
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