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THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE |
| ZHOU Jun-ming;HUANG-Yi;YANG Zhong-xing;CHENG Wen-qin |
| Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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ZHOU Jun-ming, HUANG-Yi, YANG Zhong-xing et al 1985 Chin. Phys. Lett. 2 277-280 |
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Abstract With the use of RHEED, a new surface reconstruction AlxGa1-xAs (001)-(3 x 2) induced by Si dopant, and a Si dopant effect for suppressing island growth and promoting layer by layer growth are observed.
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Published: 01 June 1985
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