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CRYSTALLIZATION OF AMORPHOUS Ge IN Ge/Au BILAYER FILMS AND Ge-Au Alloy FILMS |
| ZHANG Ren-ji;CHU Sheng-lin;WU Zi-qin* |
| Department of Physics, Peking University, Beijing
*Fundamental Physics Center, University of Science and Technology of China, Hefei, Anhui |
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| Cite this article: |
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ZHANG Ren-ji, CHU Sheng-lin, WU Zi-qin 1985 Chin. Phys. Lett. 2 221-224 |
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Abstract The crystallization temperature of amorphous Ge(a-Ge) in a-Ge/polycrystalline Au(p-Au) films is much lower than that in a-Ge/monocrystalline Au(m-Au) films. In order to explain this phenomenon it is suggested that the grain boundary triple points of p-Au films are the favourable nucleation positions. The favourable crystallization regions in a-Ge/p-Au films are related to the agglomeration of p-Au films. The crystallization temperature of Ge-Au alloy films is lower than that of a-Ge/p-Au films when Au content in alloy films is less than 35wt%, and is higher when Au content is more than 35wt%.
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Published: 01 May 1985
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