| Original Articles |
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IR SPECTRAL STUDY OF a-Si: H FILMS PREPARED BY H-DOPING EVAPORATION METHOD |
| PANG Da-wen;WANG Yi-ming;MA1 Zhen-hong*;CUI Shu-fan* |
| Beijing Polytechnic University, Beijing
*Institute of Physics, Academia Sinica, Beijing |
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| Cite this article: |
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PANG Da-wen, WANG Yi-ming, MA Zhen-hong et al 1985 Chin. Phys. Lett. 2 461-464 |
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Abstract The IR difference spectra of a-Si:H films prepared by H-doping evaporation ( H. D. E. ) method were compared with those by glow discharge (G.D.) method. It has been found that the bonding H content of E.D.E. sample is comparable to that of G.D. sample. The behaviour of absorption bonds of dehydrogenated samples seems to show that the Si-H bonds in H.D.E. sample are more stable than those in G.D. sample.
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Published: 01 October 1985
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