| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Current Controlled Relaxation Oscillations in Ge$_{2}$Sb$_{2}$Te$_{5}$-Based Phase Change Memory Devices |
| Yao-Yao Lu1,2, Dao-Lin Cai1**, Yi-Feng Chen1, Yue-Qing Wang1,2, Hong-Yang Wei1,2, Ru-Ru Huo1,3, Zhi-Tang Song1 |
1State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100080
3Shanghaitech University, Shanghai 200031
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| Cite this article: |
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Yao-Yao Lu, Dao-Lin Cai, Yi-Feng Chen et al 2016 Chin. Phys. Lett. 33 038503 |
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Abstract The relaxation oscillation of the phase change memory (PCM) devices based on the Ge$_{2}$Sb$_{2}$Te$_{5}$ material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage $V_{\rm th}$. However, the relaxation oscillation would not terminate until the remaining voltage $V_{\rm on}$ reaches the holding voltage $V_{\rm h}$. This demonstrates that the relaxation oscillation might be controlled by $V_{\rm on}$. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.
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Received: 16 November 2015
Published: 31 March 2016
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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82.60.Nh
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(Thermodynamics of nucleation)
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64.60.Ht
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(Dynamic critical phenomena)
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