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Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array
Yang Li, Sheng-Kai Liao, Fu-Tian Liang, Qi Shen, Hao Liang, Cheng-Zhi Peng
Chin. Phys. Lett. 2016, 33 (03):
030303
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DOI: 10.1088/0256-307X/33/3/030303
Quantum random number generators adopting single photon detection have been restricted due to the non-negligible dead time of avalanche photodiodes (APDs). We propose a new approach based on an APD array to improve the generation rate of random numbers significantly. This method compares the detectors' responses to consecutive optical pulses and generates the random sequence. We implement a demonstration experiment to show its simplicity, compactness and scalability. The generated numbers are proved to be unbiased, post-processing free, ready to use, and their randomness is verified by using the national institute of standard technology statistical test suite. The random bit generation efficiency is as high as 32.8% and the potential generation rate adopting the 32$\times $32 APD array is up to tens of Gbits/s.
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Stark-Broadened Profiles of the Spectral Line $P_ \alpha$ in He II Ions
Bin Duan, Muhammad Abbas Bari, Ze-Qing Wu, Jun Yan, Jian-Guo Wang
Chin. Phys. Lett. 2016, 33 (03):
033201
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DOI: 10.1088/0256-307X/33/3/033201
We report a systematic method to perform calculations of spectral line broadening parameters in plasmas. This method is applied to calculate Stark-broadening line profiles of $P_{\alpha}(n=4\rightarrow n=3)$ transitions under certain specific plasma conditions, by treating this case as an example. In the framework of the fully relativistic Dirac R-matrix theory, we calculate the electron-impact broadening operators, which are assumed to be diagonal matrix to simplify the situation. The electric microfield distribution function is calculated by retaining Hooper's formalism. The dipole matrix elements and atomic structure parameters used in these calculations have been obtained from atomic structure GRASP code. Based on this required data, we calculate the Stark-broadened line profiles of the Paschen spectral lines in He II ions in a systematic manner. Overall, there is a very good agreement between our calculated Stark-broadened line profiles and other line broadening numerical simulation codes (SimU and MELS). Our reported spectral line-broadening data have real applications in plasma spectroscopy, plasma diagnosis and also play a fundamental role in plasma modeling.
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Using Target Ablation for Ion Beam Quality Improvement
Shuan Zhao, Chen Lin, Jia-Er Chen, Wen-Jun Ma, Jun-Jie Wang, Xue-Qing Yan
Chin. Phys. Lett. 2016, 33 (03):
035202
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DOI: 10.1088/0256-307X/33/3/035202
During the laser foil interaction, the output ion beam quality including the energy spread and beam divergence can be improved by the target ablation, due to the direct laser acceleration (DLA) electrons generated in the ablation plasma. The acceleration field established at the target rear by these electrons, which is highly directional and triangle-envelope, is helpful for the beam quality. With the help of the target ablation, both the beam divergence and energy spread will be reduced. If the ablation is more sufficient, the impact of DLA-electron-caused field will be strengthened, and the beam quality will be better, confirmed by the particle-in-cell simulation.
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Time-Resolved Transmission Measurements of Warm Dense Iron Plasma
Bo Qing, Yang Zhao, Min-Xi Wei, Hang Li, Gang Xiong, Min Lv, Zhi-Min Hu, Ji-Yan Zhang, Jia-Min Yang
Chin. Phys. Lett. 2016, 33 (03):
035203
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DOI: 10.1088/0256-307X/33/3/035203
Transmission measurements of warm dense iron plasma are reported over the photon energy range of 400–1200 eV, including the strong 2$p$–3$d$ structures. One-dimensional hydrodynamic simulation is performed to estimate the plasma conditions: temperatures of several eV and densities of about $0.1$ g/cm$^3$. By using the simulated temperature and density, the calculations of the transmission spectra are performed and compared with the time-resolved experimental results.
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Ground-State Structure and Physical Properties of NB$_{2}$ Predicted from First Principles
Jing-He Wu, Chang-Xin Liu
Chin. Phys. Lett. 2016, 33 (03):
036202
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DOI: 10.1088/0256-307X/33/3/036202
Using the newly developed particle swarm optimization algorithm on crystal structural prediction, we predict a new class of boron nitride with stoichiometry of NB$_{2}$ at ambient pressure, which belongs to the tetragonal $I\bar{4}m2$ space group. Then, its structure, elastic properties, electronic structure, and chemical bonding are investigated by first-principles calculations with the density functional theory. The phonon calculation and elastic constants confirm that the predicted NB$_{2}$ is dynamically and mechanically stable, respectively. The large bulk modulus, large shear modulus, large Young's modulus, and small Poisson's ratio show that the $I\bar{4}m2$ NB$_{2}$ should be a new superhard material with a calculated theoretical Vickers hardness value of 66 GPa. Further analysis on density of states and electron localization function demonstrate that the strong B–B and B–N covalent bonds are the main reason for its high hardness in $I\bar{4}m2$ NB$_{2}$.
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Splitting Phenomenon Induced by Magnetic Field in Metallic Carbon Nanotubes
Gui-Li Yu, Yong-Lei Jia, Gang Tang
Chin. Phys. Lett. 2016, 33 (03):
037101
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DOI: 10.1088/0256-307X/33/3/037101
In the framework of the tight-binding model, the excitons states and linear absorption spectra are calculated in the metallic single-walled carbon nanotubes, with the axial magnetic field applied. From our calculations, it is found that for the $M_{11}$ and $M_{22}$ transitions, the exciton states are split into four separate column states by the applied magnetic field due to the symmetry breaking. More interesting is that the splitting can be directly reflected from the linear absorption spectra, which are dominated by four main absorption peaks. In addition, the splitting with increasing the axial magnetic field is also calculated, which increases linearly with the applied magnetic field. The obtained results are expected to be detected by the future experiments.
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Single Crystal Growth and Physical Property Characterization of Non-centrosymmetric Superconductor PbTaSe$_2$
Yu-Jia Long, Ling-Xiao Zhao, Pei-Pei Wang, Huai-Xin Yang, Jian-Qi Li, Hai Zi, Zhi-An Ren, Cong Ren, Gen-Fu Chen
Chin. Phys. Lett. 2016, 33 (03):
037401
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DOI: 10.1088/0256-307X/33/3/037401
We report on the single crystal growth and superconducting properties of PbTaSe$_2$ with the non-centrosymmetric crystal structure. By using the chemical vapor transport technique, centimeter-size single crystals are successfully obtained. The measurement of temperature dependence of electrical resistivity $\rho(T)$ in both normal and superconducting states indicates a quasi-two-dimensional electronic state in contrast to that of polycrystalline samples. Specific heat $C(T)$ measurement reveals a bulk superconductivity with $T_{\rm c}\simeq3.75$ K and a specific heat jump ratio of 1.42. All these results are in agreement with a moderately electron–phonon coupled, type-II Bardeen–Cooper–Schrieffer superconductor.
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Highly Efficient Greenish-Yellow Phosphorescent Organic Light-Emitting Diodes Based on a Novel 2,3-Diphenylimidazo[1,2-a]Pyridine Iridium(III) Complex
Jun Sun, Min Xi, Zi-Sheng Su, Hai-Xiao He, Mi Tian, Hong-Yan Li, Hong-Ke Zhang, Tao Mao, Yu-Xiang Zhang
Chin. Phys. Lett. 2016, 33 (03):
038501
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DOI: 10.1088/0256-307X/33/3/038501
A cyclometalated greenish-yellow emitter 2,3-diphenylimidazo[1,2-a]pyridine iridium(III) complex is successfully synthesized and used to fabricate phosphorescent organic light-emitting diodes. The optimized device exhibits a greenish-yellow emission with the peak at 523 nm and a strong shoulder at 557 nm, corresponding to Commission Internationale de l'Eclairage coordinates of (0.38, 0.58). The full width at half maximum of the device is 93 nm, which is broader than the fac-tris(2-phenylpyridine)iridium [Ir(ppy)$_{3}$] based reference device of 78 nm. Meanwhile, a maximum current efficiency of 62.6 cd/A (47.5 lm/W) is obtained. This result is higher than a maximum current efficiency of 54.8 cd/A (43 lm/W) of the Ir(ppy)$_{3}$ based device. The results indicate that this new iridium complex may have potential applications in fabricating high color rendering index white organic light emitting diodes.
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Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination
Lan-Feng Tang, Hai Lu, Fang-Fang Ren, Dong Zhou, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang,
Chin. Phys. Lett. 2016, 33 (03):
038502
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DOI: 10.1088/0256-307X/33/3/038502
The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial state after long-time storage.
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Current Controlled Relaxation Oscillations in Ge$_{2}$Sb$_{2}$Te$_{5}$-Based Phase Change Memory Devices
Yao-Yao Lu, Dao-Lin Cai, Yi-Feng Chen, Yue-Qing Wang, Hong-Yang Wei, Ru-Ru Huo, Zhi-Tang Song
Chin. Phys. Lett. 2016, 33 (03):
038503
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DOI: 10.1088/0256-307X/33/3/038503
The relaxation oscillation of the phase change memory (PCM) devices based on the Ge$_{2}$Sb$_{2}$Te$_{5}$ material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage $V_{\rm th}$. However, the relaxation oscillation would not terminate until the remaining voltage $V_{\rm on}$ reaches the holding voltage $V_{\rm h}$. This demonstrates that the relaxation oscillation might be controlled by $V_{\rm on}$. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.
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Comprehensive Study of SF$_{6}$/O$_{2}$ Plasma Etching for Mc-Silicon Solar Cells
Tao Li, Chun-Lan Zhou, Wen-Jing Wang
Chin. Phys. Lett. 2016, 33 (03):
038801
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DOI: 10.1088/0256-307X/33/3/038801
The mask-free SF$_{6}$/O$_{2}$ plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF$_{6}$/O$_{2}$ flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF$_{6}$/O$_{2 }$flow ratios and etching time, the optimal efficiency of 15.7% on $50\times50$ mm$^{2}$ reactive ion etching textured mc-silicon silicon solar cells is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 mV, 33.6 mA/cm$^{2}$, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.
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37 articles
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