| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition |
| GUO Hong-Yu1,2, LV Yuan-Jie1, GU Guo-Dong2, DUN Shao-Bo1, FANG Yu-Long1, ZHANG Zhi-Rong1, TAN Xin1, SONG Xu-Bo1, ZHOU Xing-Ye1, FENG Zhi-Hong1** |
1National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
2Hebei Semiconductor Research Institute, Shijiazhuang 050051
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| Cite this article: |
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GUO Hong-Yu, LV Yuan-Jie, GU Guo-Dong et al 2015 Chin. Phys. Lett. 32 118501 |
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Abstract Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15 Ω?mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs=1 V and a maximum peak extrinsic transcondutance Gm of 216 mS/mm. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.
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Received: 14 July 2015
Published: 01 December 2015
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| PACS: |
85.30.Tv
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(Field effect devices)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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52.77.Bn
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(Etching and cleaning)
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