| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Reversible and Reproducible Giant Universal Electroresistance Effect |
| SYED Rizwan1, ZHANG Sen2, YU Tian1, ZHAO Yong-Gang2, ZHANG Shu-Feng3, HAN Xiu-Feng1**
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1Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Department of Physics, Tsinghua University, Beijing 100084
3Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
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| Cite this article: |
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SYED Rizwan, ZHANG Sen, YU Tian et al 2011 Chin. Phys. Lett. 28 107308 |
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Abstract After the prediction of the giant electroresistance effect, much work has been carried out to find this effect in practical devices. We demonstrate a novel way to obtain a large electroresistance (ER) effect in the multilayer system at room temperature. The current-in-plane (CIP) electric transport measurement is performed on the multilayer structure consisting of (011)-Pb(Mg1/3Nb2/3)O3−PbTiO3(PMN−PT)/Ta/Al-O/metal. It is found that the resistance of the top metallic layer shows a hysteretic behavior as a function electric field, which corresponds well with the substrate polarization versus electric field (P–E) loop. This reversible hysteretic R–E behavior is independent of the applied magnetic field as well as the magnetic structure of the top metallic layer and keeps its memory state. This novel memory effect is attributed to the polarization reversal induced electrostatic potential, which is felt throughout the multilayer stack and is enhanced by the dielectric Al-O layer producing unique hysteretic, reversible, and reproducible resistance switching behavior. This novel universal electroresistance effect will open a new gateway to the development of future multiferroic memory devices operating at room temperature.
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73.50.-h
77.55.-g
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Received: 13 September 2011
Published: 28 September 2011
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| PACS: |
73.50.-h
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(Electronic transport phenomena in thin films)
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77.55.-g
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(Dielectric thin films)
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