| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector |
| CHEN Bin**, YANG Yin-Tang, CHAI Chang-Chun, ZHANG Xian-Jun
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Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
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CHEN Bin, YANG Yin-Tang, CHAI Chang-Chun et al 2011 Chin. Phys. Lett. 28 068501 |
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Abstract A model of novel triangular electrode metal-semiconductor-metal (TEMSM) and conventional electrode metal-semiconductor-metal (CEMSM) detectors is established by utilizing the ISE-TCAD simulator. By comparing the simulated results of TEMSM and CEMSM with experimental data, the model validity is verified and the TEMSM detector shows a superiority of a 113% photocurrent increase of 25.4 nA and similar low dark current of 3.16 pA at 30 V bias over the CEMSM device. Furthermore, the electrode angle α, width W and spacing S are optimized to obtain the enhanced device features including high UV−to-visible rejection ratio and large responsivity, etc. Under 30 V bias, the maximum UV-to-visible rejection ratio, comparable responsivity and external quantum efficiency at 310 nm are 13049, 0.1712 A/W and 68.48% for a TEMSM detector with device parameters of α=60°, W=3 μm and S=4 μm, respectively.
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| Keywords:
85.30.De
85.60.Gz
73.40.Sx
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Received: 13 July 2010
Published: 29 May 2011
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Sx
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(Metal-semiconductor-metal structures)
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