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A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition |
FAN Hai-Bo, YANG Shao-Yan, ZHANG Pan-Feng, WEI Hong-Yuan, LIU Xiang-Lin, JIAO Chun-Mei, ZHU Qin-Sheng, CHEN Yong-Hai, WANG Zhan-Guo |
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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Cite this article: |
FAN Hai-Bo, YANG Shao-Yan, ZHANG Pan-Feng et al 2008 Chin. Phys. Lett. 25 3063-3066 |
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Abstract Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2θ locations of ZnO (002) face in the XRD patterns and the E2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.
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Keywords:
81.05.Dz
81.15.Gh
81.15.Aa
82.80.Ch
82.80.Ej
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Received: 20 March 2008
Published: 25 July 2008
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PACS: |
81.05.Dz
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(II-VI semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.15.Aa
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(Theory and models of film growth)
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82.80.Ch
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82.80.Ej
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(X-ray, M?ssbauer, and other γ-ray spectroscopic analysis methods)
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