| Original Articles |
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Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia |
| LIN Guo-Qiang, ZENG Yi-Ping, WANG Xiao-Liang, LIU Hong-Xin |
| Novel Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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LIN Guo-Qiang, ZENG Yi-Ping, WANG Xiao-Liang et al 2008 Chin. Phys. Lett. 25 4097-4100 |
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Abstract Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm.
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| Keywords:
72.80.Ey
81.15.Gh
61.14.Hg
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Received: 15 April 2008
Published: 25 October 2008
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.14.Hg
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