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High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm |
| LV Shi-Long1,2, SONG Zhi-Tang1, ZHANG Ting1, FENG Song-Lin1 |
| 1Nanotechnology Laboratory, Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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LV Shi-Long, SONG Zhi-Tang, ZHANG Ting et al 2008 Chin. Phys. Lett. 25 4174-4176 |
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Abstract Si16Sb84-based line cell phase change random access memory (PCRAM), in which the Si16Sb84 phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography. The lowest current and measured pulse width for RESET operation are 115μA and 18ns, respectively. The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 106 cycles with a resistance ratio of above 800 has been achieved.
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| Keywords:
84.37.+q
85.30.De
85.40.Hp
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Received: 31 August 2008
Published: 25 October 2008
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| PACS: |
84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.40.Hp
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(Lithography, masks and pattern transfer)
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