| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates |
CHENG Yuan-Bing, WANG Yang, SUN Yu, PAN Jiao-Qing, BIAN Jing, AN Xin,
ZHAO ling-juan, WANG Wei |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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CHENG Yuan-Bing, WANG Yang, SUN Yu et al 2009 Chin. Phys. Lett. 26 054206 |
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Abstract A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26mA, a slope efficiency of 0.14W・A-1 and a side mode suppression ratio of 40dB together with a 3dB bandwidth of more than 8GHz. The device is suitable for 10Gbit/s optical fiber communication.
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| Keywords:
42.55.Px
81.15.Gh
78.66.-w
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Received: 30 December 2008
Published: 23 April 2009
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.66.-w
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(Optical properties of specific thin films)
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