Chin. Phys. Lett.  2009, Vol. 26 Issue (5): 054206    DOI: 10.1088/0256-307X/26/5/054206
FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates
CHENG Yuan-Bing, WANG Yang, SUN Yu, PAN Jiao-Qing, BIAN Jing, AN Xin,
ZHAO ling-juan, WANG Wei
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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CHENG Yuan-Bing, WANG Yang, SUN Yu et al  2009 Chin. Phys. Lett. 26 054206
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Abstract A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26mA, a slope efficiency of 0.14W・A-1 and a side mode suppression ratio of 40dB together with a 3dB bandwidth of more than 8GHz. The device is suitable for 10Gbit/s optical fiber communication.
Keywords: 42.55.Px      81.15.Gh      78.66.-w     
Received: 30 December 2008      Published: 23 April 2009
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  78.66.-w (Optical properties of specific thin films)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/5/054206       OR      https://cpl.iphy.ac.cn/Y2009/V26/I5/054206
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CHENG Yuan-Bing
WANG Yang
SUN Yu
PAN Jiao-Qing
BIAN Jing
AN Xin
ZHAO ling-juan
WANG Wei
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