| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films |
| WANG Liang-Ji1, ZHANG Shu-Ming1, WANG Yu-Tian1, JIANG De-Sheng1, ZHU Jian-Jun1, ZHAO De-Gang1, LIU Zong-Shun1, WANG Hui1, SHI Yong-Sheng1, WANG Hai1, LIU Su-Ying1, YANG Hui1,2 |
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
|
| Cite this article: |
|
WANG Liang-Ji, ZHANG Shu-Ming, WANG Yu-Tian et al 2009 Chin. Phys. Lett. 26 076104 |
|
|
|
|
Abstract A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.
|
| Keywords:
61.05.Cp
81.05.Ea
|
|
|
Received: 30 October 2008
Published: 02 July 2009
|
|
|
|
|
|
|
|
[1] Fatemi M 2002 Appl. Phys. Lett. 80 935
[2] Korbutowicz R, Kozlowski J, Dumiszewska E and SerafinczukJ 2005 Crystal Research and Technology 40 503
[3] Uschmann I et al 1993 J. Appl. Crystallogr. 26405
[4] Borowski J et al 2005 J. Alloys Compd. 401 212
[5] Metzger T et al 1998 Philos. Mag. A 77 1013
[6] Chen Z T et al 2006 J. Cryst. Growth 294 156
[7] Xu Z J et al 2007 Measurement and Analyses ofSemiconductors (Beijing: Science Press) chap 2, p 154 (in Chinese)
[8] Leszczynski M 1993 Phys. Rev. B 48 17046
[9] Gay P, Hirsch P B and Kelly A 1953 Acta Metal. 1 315
[10] Ayers J E 1994 J. Crystal Growth. 135 71
[11] Bowen D K and Tanner B K 2001 High Resolution X-rayDiffraction and Topography (London: Taylor {\& Francis) chap 3 p60 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
