Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

doi:10.1088/0256-307X/27/1/018102

Chin. Phys. Lett.

2010, Vol. 27

Issue (1): 018102 DOI: 10.1088/0256-307X/27/1/018102

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

ZHANG Dong^1,2, BAI Yi-Zhen^1,2, QIN Fu-Wen^1,2, BIAN Ji-Ming¹, JIA Fu-Chao^1,2, WU Zhan-Ling^1,2, ZHAO Ji-Jun^1,3, JIANG Xin^2,4

¹School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024²Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024³College of Advanced Science and Technology, Dalian University of Technology, Dalian 116024⁴Institute of Materials Engineering, University of Siegen, Paul-Bonatz-StraBe 9-11, D-57076 Siegen, Germany

Cite this article:

ZHANG Dong, BAI Yi-Zhen, QIN Fu-Wen et al 2010 Chin. Phys. Lett. 27 018102

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Abstract Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.

Keywords: 81.15.Gh. 68.55.J- 61.05.Cp

Received: 25 September 2009 Published: 30 December 2009

PACS:	81.15.Gh. 68.55.J-
	61.05.cp	(X-ray diffraction)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/27/1/018102 OR https://cpl.iphy.ac.cn/Y2010/V27/I1/018102

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	ZHANG Dong
	BAI Yi-Zhen
	QIN Fu-Wen
	BIAN Ji-Ming
	JIA Fu-Chao
	WU Zhan-Ling
	ZHAO Ji-Jun
	JIANG Xin

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