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Monte Carlo Simulation of Diamond Deposition at Low Temperature |
| DONG Li-Fang;ZHANG Yu-Hong |
| College of Physics Science and Technology, Hebei University,
Baoding 071002 |
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| Cite this article: |
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DONG Li-Fang, ZHANG Yu-Hong 2001 Chin. Phys. Lett. 18 1138-1140 |
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Abstract Diamond deposition at low temperature is investigated and the relationship between substrate temperature for diamond growth and the energy of the carbonaceous species is given. The electron energy distribution and velocity distribution during the electron assisted chemical vapor deposition have been obtained by using Monte Carlo simulation. The main results obtained are as follows. (1) The substrate temperature for diamond growth will be lower than 800°C when the carbonaceous species on the substrate have mobility energy. For example, if the energy of the carbonaceous species is 0.75 eV, the substrate temperature will be 380°C - 600°C. (2) The great number of atomic H on the substrate is of importance to the growth of diamond films.
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| Keywords:
81.15.Gh
02.50.Ng
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Published: 01 August 2001
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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02.50.Ng
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(Distribution theory and Monte Carlo studies)
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