Electron Field Emission of CN<suB>x</suB> Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition

Chin. Phys. Lett.

2002, Vol. 19

Issue (3): 416-418 DOI:

Original Articles

Electron Field Emission of CN_x Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition

LU Xian-Feng;LI Jin-Chai;GUO Huai-Xi;ZHANG Zhi-Hong;YE Ming-Sheng

Department of Physics, Wuhan University, Wuhan 430072

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LU Xian-Feng, LI Jin-Chai, GUO Huai-Xi et al 2002 Chin. Phys. Lett. 19 416-418

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Abstract CN_x thin films were prepared using low pressure plasma enhanced chemical vapor deposition (LP-PECVD), and then bombarded by low energy N⁺₂. The compositions before and after N⁺₂ bombardment were compared by using x-ray photoelectron spectroscopy. The electron field emission characteristics of CN_x thin films before and after N⁺₂ bombardment were studied under the pressure of 10^-6Pa. For the samples, the turn-on emission field decreased from 2.5V/μm to 1.2V/μm while the stable current density increased from 0.5mA/cm² to a value larger than 1mA/cm² before and after the bombardment. Our results illustrated that the field emission characteristics were improved after the bombardment of N⁺₂.

Keywords: 79.70.+q 81.15.Gh 81.15.Jj

Published: 01 March 2002

PACS:	79.70.+q	(Field emission, ionization, evaporation, and desorption)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.15.Jj	(Ion and electron beam-assisted deposition; ion plating)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I3/0416

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	LU Xian-Feng
	LI Jin-Chai
	GUO Huai-Xi
	ZHANG Zhi-Hong
	YE Ming-Sheng

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