| Original Articles |
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Interface Instability of Diamond Crystals at High Temperature
and High Pressure |
| YIN Long-Wei1;LI Mu-Sen1;XU Bin1;CUI Jian-Jun1;HAO Zhao-Yin2 |
| 1School of Materials Science and Engineering, Shandong University, Ji’nan 250061
2National Key Laboratory for Superhard Materials, Jilin University, Changchun 130012 |
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| Cite this article: |
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YIN Long-Wei, LI Mu-Sen, XU Bin et al 2002 Chin. Phys. Lett. 19 419-421 |
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Abstract Diamond growth instability at high temperature and high pressure (HPHT) has been elucidated by observing the cellular interface in diamond crystals. The HPHT diamond crystals grow layer by layer from solution of carbon in the molten catalyst. In the growth of any other crystals from solution, the growth interface is not stable and should be of the greatest significance further to understand the diamond growth
mechanism. During the diamond growth, the carbon atoms are delivered to the growing diamond crystal by diffusion through a diamond crystal-solution boundary layer. In front of the boundary layer, there exists a narrow constitutional supercooling zone related to the solubility difference between diamond and graphite in the molten catalyst. The diamond growth stability is broken, and the flat or planar growth interface transforms into cellular interface due to the light supercooling. The phenomenon of solute trails in the diamonds was observed, the formation of solute trails was closely associated with the cellular interface.
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| Keywords:
81.10.Aj
81.10.Dn
81.10.-h
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Published: 01 March 2002
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| PACS: |
81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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81.10.Dn
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(Growth from solutions)
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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