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Behaviour of Oxygen-Implanted and Hydrogen-Implanted SiGe/Si Heterostructure |
| AN Zheng-Hua1;ZHANG Miao1;MEN Chuan-Ling1;SHEN Qin-Wo1;LIN Zi-Xin1;LI Kai-Cheng2;LIN Cheng-Lu1 |
| 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
2Natoinal Key Laboratory of Analog IC, Sichuan Institute of Solid-State Circuits, Chongqing 400060
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| Cite this article: |
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AN Zheng-Hua, ZHANG Miao, MEN Chuan-Ling et al 2002 Chin. Phys. Lett. 19 413-415 |
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Abstract For SiGe-on-insulator fabrication, a 100nm SiGe film with uniform germanium composition was grown on Si (100) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45 keV and a dose of 3 x 1017cm-2, and annealed for five hours at 1250°C in flowing (Ar + 5% O2) atmosphere with a 100 nm oxide protective layer. The result indicates that a buried oxide layer was successfully formed at the interface of SiGe and Si on the substrate. Furthermore, hydrogen was implanted into SiGe at the energy of 62 keV and the dose of 6 x 1016cm-2 to perform a blistering study, which confirmed the feasibility of H-induced layer splitting in SiGe layer.
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| Keywords:
79.60.Jv
52.75.Rx
61.66.Dk
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Published: 01 March 2002
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