Structural and Optical Characterization of Zn<suB>1-x</suB>Cd<suB>x</suB>O Thin Films Deposited by dc Reactive Magnetron Sputtering

Chin. Phys. Lett.

2003, Vol. 20

Issue (6): 942-943 DOI:

Original Articles

Structural and Optical Characterization of Zn_1-xCd_xO Thin Films Deposited by dc Reactive Magnetron Sputtering

MA De-Wei¹;YE Zhi-Zhen¹;HUANG Jing-Yun¹;ZHAO Bing-Hui¹;WAN Shou-Ke²;SUN Xue-Hao²;WANG Zhan-Guo²

¹State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 ²Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083

Cite this article:

MA De-Wei, YE Zhi-Zhen, HUANG Jing-Yun et al 2003 Chin. Phys. Lett. 20 942-943

Download: PDF(284KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Zn_1-xCd_xO crystal thin films with different compositions were prepared on silicon and sapphire substrates by the dc reactive magnetron sputtering technique. X-ray diffraction measurements show that the Zn_1-xCd_xO films are of completely (002)-preferred orientation for x ≤ 0.6. For x = 0.8, the film is a mixture of ZnO hexagonal wurtzite crystals and CdO cubic crystals. For pure CdO, it is highly (200) preferential-oriented. Photoluminescence spectrum measurement shows that the Zn_1-xCd_xO (x = 0.2) thin film has a red-shift of 0.14 eV from that of ZnO reported previously.

Keywords: 78.66.Hf 78.55.-m 61.10.Kw 81.15.Cd

Published: 01 June 2003

PACS:	78.66.Hf	(II-VI semiconductors)
	78.55.-m	(Photoluminescence, properties and materials)
	61.10.Kw
	81.15.Cd	(Deposition by sputtering)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I6/0942

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	MA De-Wei
	YE Zhi-Zhen
	HUANG Jing-Yun
	ZHAO Bing-Hui
	WAN Shou-Ke
	SUN Xue-Hao
	WANG Zhan-Guo

Related articles from Frontiers Journals

[1]	SUN Dun-Lu,LUO Jian-Qiao,XIAO Jing-Zhong,ZHANG Qing-Li,CHEN Jia-Kang,LIU Wen-Peng,KANG Hong-Xiang,YIN Shao-Tang. Luminescence and Thermal Properties of Er:GSGG and Yb,Er:GSGG Laser Crystals**[J]. Chin. Phys. Lett., 2012, 29(5): 942-943
[2]	WAN Qi-Jian, FENG Jie, GUO Gang. Crystallization Characteristics of SiN_x-Doped SbTe Films for Phase Change Memory[J]. Chin. Phys. Lett., 2012, 29(3): 942-943
[3]	XU Xiao-Yan, MA Xiang-Yang, JIN Lu, YANG De-Ren. Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films[J]. Chin. Phys. Lett., 2012, 29(3): 942-943
[4]	ZHU Yun, WANG Yue, WAN Peng-Fei, LI Hong-Yu, WANG Shou-Yu. Optical and Mechanical Properties of Transparent Conductive Al-Doped ZnO Films Deposited by the Sputtering Method[J]. Chin. Phys. Lett., 2012, 29(3): 942-943
[5]	WU Li-Ang, FU Heng-Yi, QIAN Jiang-Yun, ZHAO Da-Liang, LUO Qun, QIAO Xu-Sheng, FAN Xian-Ping, ZHANG Xiang-Hua. The Preparation and Photoluminescence Properties of Fluorosilicate Glass Ceramics Containing CeF₃:Dy³⁺ Nanocrystals**[J]. Chin. Phys. Lett., 2012, 29(1): 942-943
[6]	LI Shao-Juan, HE Xin, HAN De-Dong, SUN Lei, WANG Yi, HAN Ru-Qi, CHAN Man-Sun, ZHANG Sheng-Dong, . Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors**[J]. Chin. Phys. Lett., 2012, 29(1): 942-943
[7]	WU Wen-Juan, WANG Zhan-Shan, ZHU Jing-Tao, ZHANG Zhong, WANG Feng-Li, CHEN Ling-Yan, ZHOU Hong-Jun, HUO Tong-Lin . Spectral Resolution Improvement of Mo/Si Multilayers**[J]. Chin. Phys. Lett., 2011, 28(8): 942-943
[8]	YANG Lin-Hong, DONG Hong-Xing, SUN Zheng, SUN Liao-Xin, SHEN Xue-Chu, CHEN Zhang-Hai . Temperature-Induced Phase Transition of In₂O₃ from a Rhombohedral Structure to a Body-Centered Cubic Structure**[J]. Chin. Phys. Lett., 2011, 28(8): 942-943
[9]	YIN Yang, RAN Guang-Zhao, ZHANG Bin, QIN Guo-Gang . Photo- and Electro-Luminescence at 1.54µm from Er³⁺ in SiC:Er₂O₃ Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 942-943
[10]	ZHANG Jia-Chi, QIN Qing-Song, YU Ming-Hui, SUN Jia-Yao, SHI Liu-Rong, MA Xin-Long . Up-Conversion Photostimulated Luminescence of Mg₂SnO₄ for Optical Storage**[J]. Chin. Phys. Lett., 2011, 28(2): 942-943
[11]	XIE Hai-Qing, CHEN Yuan, HUANG Wei-Qing, HUANG Gui-Fang, PENG Ping, PENG Li, WANG Tai-Hong, ZENG Yun, . Optical Characteristics of La-Doped ZnS Thin Films Prepared by Chemical Bath Deposition**[J]. Chin. Phys. Lett., 2011, 28(2): 942-943
[12]	LI Xu, GUAN Li, AN Jia-Yi, JIN Li-Tao, YANG Zhi-Ping, YANG Yan-Min, LI Pan-Lai, FU Guang-Sheng . Synthesis of Red Phosphor CaZrO₃:Eu³⁺ for White Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(2): 942-943
[13]	WANG Xiao, JIANG Zui-Min, XU Fei, , MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er³⁺ Emission from an Er−Si Codoped Al₂O₃ Film by Stacking Si−Doped Al₂O₃ Sublayers**[J]. Chin. Phys. Lett., 2011, 28(12): 942-943
[14]	HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing, WANG Yong-Sheng . Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering**[J]. Chin. Phys. Lett., 2011, 28(12): 942-943
[15]	XU Jia-Xiong, YAO Ruo-He, LIU Yu-Rong . Fabrication of a ZnO:Al/Amorphous-FeSi₂ Heterojunction at Room Temperature*[J]. Chin. Phys. Lett., 2011, 28(10): 942-943

Viewed

Full text

Abstract