Original Articles |
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Transient and Stationary Simulations for a Quantum Hydrodynamic Model |
HU Xin;TANG Shao-Qiang |
LTCS, Department of Mechanics and Aerospace Engineering, College of Engineering, Peking University, Beijing 100871 |
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Cite this article: |
HU Xin, TANG Shao-Qiang 2007 Chin. Phys. Lett. 24 1437-1440 |
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Abstract The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are comparatively studied for semiconductor charge transport in a resonant tunnelling diode. When the bias is not small, our numerical results show a deviation of the asymptotic transient solutions from the stationary ones. A dynamic instability accounts for such deviation. The stationary quantum hydrodynamic model is therefore unsuitable in general for simulating quantum devices.
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Keywords:
02.60.Cb
73.63.-b
02.30.Jr
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Received: 20 September 2006
Published: 17 May 2007
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PACS: |
02.60.Cb
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(Numerical simulation; solution of equations)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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02.30.Jr
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(Partial differential equations)
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