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Direct Observation of Tunnelling through 100-nm-Wide All Metal Magnetic Junction into Si |
| Nam H. KIM1;WANG Ke-Qiang1,2;ZHANG Yu3;WANG Jian-Qing1 |
| 1Department of Physics, State University of New York, Binghamton, NY 13902, USA2School of Information, Zhongkai University of Agriculture and echnology, Guangzhou 5102253Department of Electrical Engineering, State University of New York, Binghamton, NY 13902, USA |
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Nam H. KIM, WANG Ke-Qiang, ZHANG Yu et al 2008 Chin. Phys. Lett. 25 1407-1410 |
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Abstract Nanoscaled spin-dependent tunnelling lines were patterned on doped Si and studied for tunnelling from the SDT ferromagnetic layer through an insulating barrier into Si. The injection contacts have the form of long strips with width and separation, ranging from 100nm to 2μm, and are patterned using e-beam lithography. The measured I-V characteristics versus temperature (80 to 300K) on the 100nm scaled devices between the layered-magnetic metals and the semiconductor clearly showed ballistic tunnelling, with weak dependence on the temperature. This is qualitatively different, at elevated temperatures, from 2-μm-wide scaled-up spin-dependent tunnelling structures, where thermal-ionic emission was observed to dominate carrier transport.
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72.25.Hg
73.23.Ad
73.40.Gk
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Received: 10 June 2007
Published: 31 March 2008
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