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PHOTOLUMINESCENCE OF GaAs/AlAs QUANTUM WELLS |
| ZHUANG Weihua;TENG Da;XU Zhongying;Xu Jizong;CHEN Zonggui |
| Institute of Semiconductors, Academia Sinica, Beijing |
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| Cite this article: |
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ZHUANG Weihua, TENG Da, XU Zhongying et al 1986 Chin. Phys. Lett. 3 533-536 |
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Abstract An unusual emission - I line has been observed in the photoluminescence spectra of MBE GaAs/AlAs MQW at 4.2K. Its half width is 6.5-9meV with peak energy Located between the near band transition and the free electrons to carbon acceptors transition in bulk GaAs. The peak energy increases roughly linearly with the logarithm of the excitation power. The emission intensity decreases with the increase of temperature and disappears at about 15K.
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Published: 01 December 1986
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