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Fractal Aggregation Behavior in Amorphous Silicon Nitride Films |
YE Chao;NING Zhao-yuan;GUO Yu-hua1;WANG Xiang-ying1;XIN Yu;WANG Yuan-chang1;SHEN Ming-rong;WANG Hao |
Laboratory of Films Materials, Department of Physics, Suzhou University, Suzhou 215006
1Department of Electron Microscope, Suzhou Medical College, Suzhou 215007
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Cite this article: |
YE Chao, NING Zhao-yuan, GUO Yu-hua et al 1997 Chin. Phys. Lett. 14 446-448 |
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Abstract A fractal aggregation behavior in amorphous silicon nitride (Six Ny) films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition is reported. The fractal structure and dimension of 1.45 obtained by experiment and computer simulation are all in excellent agreement with the result predicted by the cluster-cluster-aggregation model. The forming of fractal structure is related to the change of discharge mode between ring plasma and bulk plasma.
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Keywords:
68.55.Jk
61.43.Hv
73.50.Mx
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Published: 01 June 1997
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PACS: |
68.55.Jk
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61.43.Hv
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(Fractals; macroscopic aggregates (including diffusion-limited Aggregates))
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73.50.Mx
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(High-frequency effects; plasma effects)
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