Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment

Chin. Phys. Lett.

1997, Vol. 14

Issue (9): 690-693 DOI:

Original Articles

Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment

YIN Min^1,2;LOU Li-ren²;FU Zhu-xi²

¹Structure Research Laboratory, University of Science and Technology of China and Chinese Academy of Sciences, Hefei 230026 ²Department of Physics, University of Science and Technology of China, Hefei 230026

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YIN Min, LOU Li-ren, FU Zhu-xi 1997 Chin. Phys. Lett. 14 690-693

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Abstract A new method for metalorganic chemical vapor deposition (MOCVD) of GaAs on Si substrates is developed. Instead of the usual high temperature surface cleaning treatment for Si substrate, the new method uses room temperature HF vapor polishing in the preparation chamber in the MOCVD system as the first step of the growth. Single crystal GaAs layers with mirror-like surfaces were obtained.

Keywords: 68.55.Ce 81.15.Gh 78.66.Fd

Published: 01 September 1997

PACS:	68.55.Ce
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.66.Fd	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I9/0690

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	YIN Min
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