Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films

Chin. Phys. Lett.

1997, Vol. 14

Issue (9): 682-685 DOI:

Original Articles

Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films

HAN Wei-qiang^1,2;HAN Gao-rong¹;FAN Shou-shan²;GU Bing-lin²

¹Department of Materials, Zhejiang University, Hangzhou 310027 ²Department of Physics, Tsinghua University, Beijing 100084

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HAN Wei-qiang, HAN Gao-rong, FAN Shou-shan et al 1997 Chin. Phys. Lett. 14 682-685

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Abstract Hydrogenated nanocrystalline silicon nitrogen (nc-SiN_x:H) films were prepared by rf glow discharge of gas mixture of silane (SiH₄) and nitrogen (N₂) diluted heavily by hydrogen (H₂). The effect of the gas volume ratios Xg of (SiU₄ +N₂)/H₂ and X_N) of N₂/SiH₄ on the crystallization and composition of films is described. The growth process and crystallization mechanism of nc-SiN_x:H films are discussed in detail.

Keywords: 61.16.-d 81.15.Gh

Published: 01 September 1997

PACS:	61.16.-d
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I9/0682

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	HAN Wei-qiang
	HAN Gao-rong
	FAN Shou-shan
	GU Bing-lin

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