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Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films |
WANG Xiao-ping;WANG Li-jun;XU Yue-e1;SHEN Shu-po1 |
Department of Applied Science, Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052
1Institute of Physics Engineering, Zhengzhou University, Zhengzhou 450052
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Cite this article: |
WANG Xiao-ping, WANG Li-jun, XU Yue-e et al 1997 Chin. Phys. Lett. 14 772-774 |
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Abstract Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate. Dependence of switching behaviour on boron impurity has been investigated. The threshold voltage obviously decreases with increasing content of boron dopant.
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Keywords:
68.55.Gi
85.60.Jb
81.15.Gh
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Published: 01 October 1997
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PACS: |
68.55.Gi
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85.60.Jb
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(Light-emitting devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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Abstract
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